BARRIER HEIGHT REDUCTION FOR GRADED N-N HETEROJUNCTIONS

被引：7

作者：

RAYMOND, RM ^{[1
]}

HAYES, RE ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT ELECT ENGN,BOULDER,CO 80309

来源：

关键词：

D O I：

10.1063/1.323731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1359 / 1360

页数：2

共 5 条

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ANDERSON, RL .

[2] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J].

CHEUNG, DT ;

CHIANG, SY ;

PEARSON, GL .

[3]

Kroemer H., 1975, Critical Reviews in Solid State Sciences, V5, P555, DOI 10.1080/10408437508243512

[4] N-N SEMICONDUCTOR HETEROJUNCTIONS [J].

OLDHAM, WG ;

MILNES, AG .

[5] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

WOMAC, JF ;

REDIKER, RH .