LOW-TEMPERATURE ETCHING FOR DEEP-SUBMICRON TRILAYER RESIST

被引：10

作者：

KURE, T ^{[1
]}

KAWAKAMI, H ^{[1
]}

TACHI, S ^{[1
]}

ENAMI, H ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OUME,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 07期

关键词：

LOW-TEMPERATURE ETCHING; MICROWAVE PLASMA; TRILAYER RESIST; DEEP-SUBMICRON; CHLORINE PASSIVATION; TAPERED SIDE WALL;

D O I：

10.1143/JJAP.30.1562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Cl2 addition to O2 plasma used for deep-submicron trilayer resist etching are investigated. The bottom-layer organic resist is etched using a low-temperature microwave plasma etcher. With O2 + Cl2 etching gas, highly anisotropic etching is achieved at higher temperatures than with pure O2. Cl2 concentrations above 25% reduce resist selectivity relative to the SOG intermediate layer. Vertical 0.1-mu-m-wide resist patterns are achieved with O2 + 25% Cl2 at -60-degrees-C. Broadened resist patterns with tapered side walls are produced at lower temperatures and at higher Cl2 concentrations; this is thought to be caused by chlorine passivation and polymer deposition on the side walls.

引用

页码：1562 / 1566

页数：5

共 7 条

[1] LOW-TEMPERATURE ION-BEAM ENHANCED ETCHING OF TUNGSTEN FILMS WITH XENON DIFLUORIDE [J].