LOW-THRESHOLD CURRENT ALGAAS GAAS-DISTRIBUTED FEEDBACK LASER GROWN BY 2-STEP MOLECULAR-BEAM EPITAXY

被引：2

作者：

KOJIMA, K

NODA, S

MITSUNAGA, K

KYUMA, K

NAKAYAMA, T

机构：

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1986年 / 4卷 / 05期

关键词：

D O I：

10.1109/JLT.1986.1074755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：507 / 512

页数：6

共 14 条

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[4]

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[7]

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[9] CW OPERATION OF DISTRIBUTED-FEEDBACK GAAS-GAAIAS DIODE LASERS AT TEMPERATURES UP TO 300-K [J].

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[10] LONGITUDINAL-MODE CHARACTERISTICS FOR 1.3-MU-M GAINASP-INP DFB LASERS JUST BELOW THE THRESHOLD CURRENT [J].

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