BAND ALIGNMENTS IN ZN(CD)S(SE) STRAINED LAYER SUPERLATTICES

被引:32
作者
TRAGERCOWAN, C
PARBROOK, PJ
HENDERSON, B
ODONNELL, KP
机构
[1] Strathclyde Univ., Glasgow
关键词
D O I
10.1088/0268-1242/7/4/016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We estimate, by reviewing the available photoluminescence data, the band alignments at heterojunctions of Zn(Cd)S(Se) semiconductors. The photoluminescence peak energies of ZnSe-ZnS, CdS-ZnS and CdSe-ZnSe strained layer superlattiCeS (SLS), with a range of well and barrier widths, have been calculated using Kronig-Penney theory and assumed values of the band offsets which yield acceptable fits to both our experiments and data taken from the literature. For ZnSe-ZnS SLS, fair agreement is obtained between calculation and experiment by assuming, in line with previous work, a negligible conduction band offset. At the same time, good estimates of the photoluminescence peak energies of CdS-ZnS and CdSe-ZnSe superlattices are obtained by assuming a negligible valence band offset in each case. We construct a band alignment diagram which predicts that CdSe-CdS and CdS-ZnSe are type-II SLs with electron confinement in the CdS layers; these predictions are borne out by experiment.
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页码:536 / 541
页数:6
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