SINGLE-MODE OSCILLATION OF LASER-DIODE-PUMPED ND-YVO4 MICROCHIP LASERS

被引：178

作者：

TAIRA, T

MUKAI, A

NOZAWA, Y

KOBAYASHI, T

机构：

[1] Faculty of Engineering, Fukui University, Fukui, 910

来源：

OPTICS LETTERS | 1991年 / 16卷 / 24期

关键词：

D O I：

10.1364/OL.16.001955

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Single-mode-oscillation output power of approximately 103 mW has been observed in 1.1-at.%-doped Nd:YVO4 pumped with a 500-mW laser diode. Continuous-wave thresholds of approximately 5.3 mW have been observed with slope efficiencies of greater than 32.4%. The microchip laser can be tuned over 107 GHz, without mode hopping, by heating the laser crystal.

引用

页码：1955 / 1957

页数：3

共 9 条

[1] TWISTED-MODE TECHNIQUE FOR OBTAINING AXIALLY UNIFORM ENERGY DENSITY IN LASER CAVITY
EVTUHOV, V
SIEGMAN, AE
[J]. APPLIED OPTICS, 1965, 4 (01) : 142 - +
[2] DIODE LASER-PUMPED SOLID-STATE LASERS
FAN, TY
BYER, RL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (06) : 895 - 912
[3] HIGHLY EFFICIENT ND-YVO4 DIODE-LASER END-PUMPED LASER
FIELDS, RA
BIRNBAUM, M
FINCHER, CL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1885 - 1886
[4] MONOLITHIC, UNIDIRECTIONAL SINGLE-MODE ND-YAG RING LASER
KANE, TJ
BYER, RL
[J]. OPTICS LETTERS, 1985, 10 (02) : 65 - 67
[5] SINGLE-FREQUENCY OPERATION IN SOLID-STATE LASER MATERIALS WITH SHORT ABSORPTION DEPTHS
KINTZ, GJ
BAER, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1990, 26 (09) : 1457 - 1459
[6] Kojima T., 1990, Review of Laser Engineering, V18, P646, DOI 10.2184/lsj.18.8_646
[7] UNUSUAL CRYSTAL-FIELD ENERGY LEVELS AND EFFICIENT LASER PROPERTIES OF YVO4 - ND
OCONNOR, JR
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (11) : 407 - +
[8] SIEGMAN AE, 1986, LASERS, P465
[9] FREQUENCY-MODULATED ND-YAG MICROCHIP LASERS
ZAYHOWSKI, JJ
MOORADIAN, A
[J]. OPTICS LETTERS, 1989, 14 (12) : 618 - 620

← 1 →