HOLE RELAXATION IN P-TYPE INXGA1-XAS/ALYGA1-YAS QUANTUM-WELLS OBSERVED BY ULTRAFAST MIDINFRARED SPECTROSCOPY

被引：18

作者：

XU, Z

FAUCHET, PM

RELLA, CW

RICHMAN, BA

SCHWETTMAN, HA

WICKS, GW

机构：

[1] STANFORD UNIV,STANFORD PICOSECOND FEL CTR,W W HANSEN EXPTL PHYS LAB,STANFORD,CA 94305

[2] UNIV ROCHESTER,INST OPT,ROCHESTER,NY 14627

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10631

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed midinfrared pump-probe transmission measurements in p-type strained In0.5Ga0.5As/Al0.5Ga0.5As quantum wells at room temperature. The laser source was a midinfrared free-electron laser generating subpicosecond pulses and tuned on resonance between the heavy-hole and the light-hole subbands. The relaxation time is ∼1 ps, which is shorter than for electrons in the conduction band. Interactions between the optical phonons and holes account for the measured relaxation. © 1995 The American Physical Society.

引用

页码：10631 / 10634

页数：4

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