QUANTIZED HALL AND TRANSVERSE RESISTIVITIES IN SILICON MOS N-INVERSION LAYERS

被引：37

作者：

YOSHIHIRO, K ^{[1
]}

KINOSHITA, J ^{[1
]}

INAGAKI, K ^{[1
]}

YAMANOUCHI, C ^{[1
]}

MORIYAMA, J ^{[1
]}

KAWAJI, S ^{[1
]}

机构：

[1] GAKUSHUIN UNIV,DEPT PHYS,TOSHIMA KU,TOKYO 171,JAPAN

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90630-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：706 / 708

页数：3

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[7]

GIRVIN SM, US NBS SPECIAL PUBLI, V617

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HALPERIN, BI .

PHYSICAL REVIEW B, 1982, 25 (04) :2185-2190

[9] QUANTUM GALVANOMAGNETIC EXPERIMENTS IN SILICON INVERSION LAYERS UNDER STRONG MAGNETIC-FIELDS [J].

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[10]

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