INTERPRETATION OF DEFECTS IN FIELD ION IMAGES - FCC MATERIALS

被引:20
作者
SANWALD, RC
HREN, JJ
机构
[1] Department of Metallurgical and Materials Engineering, University of Florida, Gainesville, FL
关键词
D O I
10.1016/0039-6028(68)90176-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A computer model has been used to simulate a selection of dislocation configurations in field ion images of fcc structures. The results are consistent with the published suggestion that all total dislocation configurations can be interpreted in terms of spirals. Interpretation of actual experimental images and correlation with results of the computer simulation are presented. © 1968.
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页码:257 / &
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