EFFECT OF BIAXIAL STRAIN ON ACCEPTOR-LEVEL ENERGIES IN INYGA1-YAS/ALXGA1-XAS (ON GAAS) QUANTUM-WELLS - COMMENT

被引:3
作者
ANDREANI, LC [1 ]
FRAIZZOLI, S [1 ]
PASQUARELLO, A [1 ]
机构
[1] ECOLE POLYTECH FED LAUSANNE,INST PHYS THEOR,CH-1015 LAUSANNE,SWITZERLAND
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 12期
关键词
D O I
10.1103/PhysRevB.42.7641
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In a recent paper on acceptors in strained quantum wells [J. P. Loehr and J. Singh, Phys. Rev. B 41, 3695 (1990)], a splitting between the two spin states is found when the impurity is placed off center. We point out that this splitting is inconsistent with symmetry and show that the error arises from an incorrect treatment of the transformation properties of the valence envelope functions. © 1990 The American Physical Society.
引用
收藏
页码:7641 / 7642
页数:2
相关论文
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