STRAIN DEPENDENCE OF LOCALIZED STATES IN QUANTUM-WELL STRUCTURES

被引：18

作者：

POTZ, W

FERRY, DK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1006 / 1010

页数：5

共 18 条

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[6] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

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ANDERSON, NG .

APPLIED PHYSICS LETTERS, 1985, 46 (10) :967-969

[7] THEORY OF BAND LINE-UPS [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :1231-1238

[8] NEW ELECTRON-STATES IN GAAS-GAXAL1-XAS SUPERLATTICE [J].

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[9] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J].

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[10]

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