THEORETICAL-ANALYSIS OF ELECTRON-BEAM EXPOSURE PARAMETERS AND ETCHING SELECTIVITY UPON ORGANOSILICON BILAYER RESIST IMAGES

被引：3

作者：

PARASZCZAK, J

ROSENFIELD, M

HATZAKIS, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 01期

关键词：

D O I：

10.1116/1.583846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：129 / 134

页数：6

共 17 条

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