DETERMINATION OF MOS OXIDE CAPACITANCE

被引：49

作者：

MCNUTT, MJ

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3909 / 3913

页数：5

相关论文

共 6 条

[1]

McDougall J., 1938, PHILOS T R SOC A, V237, P67, DOI [10.1098/rsta.1938.0004, DOI 10.1098/RSTA.1938.0004]

[2] EFFECTS OF SPATIALLY INHOMOGENEOUS OXIDE CHARGE DISTRIBUTION ON MOS CAPACITANCE-VOLTAGE CHARACTERISTICS [J].

MCNUTT, MJ ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3916-3921

[3] EXACT ANALYTICAL SOLUTION OF HIGH FREQUENCY LOSSLESS MOS CAPACITANCE-VOLTAGE CHARACTERISTICS AND VALIDITY OF CHARGE ANALYSIS [J].

SAH, CT ;

PIERRET, RF ;

TOLE, AB .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :681-+

[4] ERROR ANALYSIS OF SURFACE STATE DENSITY DETERMINATION USING MOS CAPACITANCE METHOD [J].

SAH, CT ;

TOLE, AB ;

PIERRET, RF .

SOLID-STATE ELECTRONICS, 1969, 12 (09) :689-+

[5]

SAH CT, UNPUBLISHED

[6] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299