2-GB/S SENSITIVITY OF A GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTOR/GAAS FIELD-EFFECT TRANSISTOR HYBRID PHOTORECEIVER

被引:6
作者
CHEN, CY
KASPER, BL
COX, HM
PLOURDE, JK
机构
[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733
[2] BELL COMMUN RES,MURRAY HILL,NJ 07974
[3] AT&T BELL LABS,ALLENTOWN,PA 18103
关键词
LASERS - Optical Pumping - OPTICAL COMMUNICATION - TRANSISTORS; FIELD EFFECT;
D O I
10.1063/1.95638
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have measured the 2-Gb/s sensitivity of a photoreceiver consisting of a Ga//0//. //4//7In//0//. //5//3As photoconductive detector and a GaAs low-noise field-effect transistor. For a bit error rate of 10** minus **9, the photoconductive receiver shows a sensitivity of minus 28. 8 dbm at 2 Gb/s and 1. 51 mu m. In view of its high receiver sensitivity and simplicity, the Ga//0//. //4//7In//0//. //5//3As photoconductive detector may be attractive for applications in high data rate lightwave communication systems, particularly local area networks.
引用
收藏
页码:379 / 381
页数:3
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