A STUDY ON SYNTHESIS OF DIAMOND BY CAPACITIVELY COUPLED RF PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

LEE, SR ^{[1
]}

GALLOIS, B ^{[1
]}

机构：

[1] STEVENS INST TECHNOL LIB, HOBOKEN, NJ 07030 USA

来源：

关键词：

D O I：

10.1016/0925-9635(92)90031-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A capacitively coupled RF plasma-assisted chemical vapor deposition reactor was used to synthesize diamond. A diamond phase (sp3C-C bonds) was detected in the deposits by Raman scattering spectroscopy. Its concentration, measured by core electron energy loss spectroscopy (CEELS), was estimated to be about 40%. The amount of hydrogen in the deposits measured by hydrogen profiling by helium ions was of the order of 1% regardless of the growth conditions. These results suggested a possibility of diamond synthesis by a capacitively coupled RF PACVD technique. © 1992.

引用

页码：235 / 238

页数：4

共 33 条

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[2]

ANGUS JC, 1971, Patent No. 3630677

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