VERY LOW-TEMPERATURE GROWTH AND DOPING OF HG-BASED EPILAYERS AND SUPERLATTICES

被引:2
作者
LANSARI, Y
YANG, Z
HWANG, S
REED, FE
SOWERS, AT
COOK, JW
SCHETZINA, JF
机构
[1] Department of Physics, North Carolina State University, Raleigh
关键词
D O I
10.1016/0022-0248(91)91069-M
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Photoassisted MBE growth of Hg-based thin films at very low temperatures (125-150-degrees-C) is reported. Substitutionally doped superlattices were also prepared at low temperatures, using modulation doping techniques in which In and As were used as n-type and p-type dopants, respectively. The doped superlattices exhibit excellent electrical properties and optical properties characteristic of 2D quantum structures. Analysis of the measured absorption data yields a valence band offset of approximately 350 meV for the HgTe-CdTe interface.
引用
收藏
页码:720 / 724
页数:5
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