INSITU INVESTIGATIONS OF THE METAL-COMPOUND SEMICONDUCTOR INTERACTION BY MASS-SPECTROMETRY AND ELECTRICAL-RESISTANCE MEASUREMENTS

被引：7

作者：

SZIGETHY, D

MOJZES, I

SEBESTYEN, T

机构：

来源：

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES | 1983年 / 52卷 / 01期

关键词：

D O I：

10.1016/0020-7381(83)85095-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

引用

页码：117 / 129

页数：13

共 30 条

[1] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].

ARTHUR, JR .

SURFACE SCIENCE, 1974, 43 (02) :449-461

[3] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].

BAYLISS, CR ;

KIRK, DL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&

[4]

Bryantseva T. A., 1978, Soviet Microelectronics, V7, P44

[5]

BRYANTSEVA TA, 1977, ELECTR TECH 2, V113, P40

[6] SURFACE-LAYERS IN HEAT-TREATED GAAS [J].

CASTANO, JL ;

PIQUERAS, J ;

MUNOZ, E .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (06) :293-297

[7] EVOLVED GAS-ANALYSIS SYSTEM [J].

GALLAGHER, PK .

THERMOCHIMICA ACTA, 1978, 26 (1-3) :175-183

[8] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].

HIRAKI, A ;

SHUTO, K ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[9] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[10]

Kocsis S., 1974, Kristall und Technik, V9, P1131, DOI 10.1002/crat.19740091008

← 1 2 3 →