TEMPERATURE DISTRIBUTION IN TIC CRYSTAL ROD PREPARED BY RF FLOATING ZONE TECHNIQUE

被引：5

作者：

OTANI, S

TANAKA, T

ISHIZAWA, Y

机构：

[1] Natl Inst for Research in Inorganic, Materials, Sakura-mura, Jpn, Natl Inst for Research in Inorganic Materials, Sakura-mura, Jpn

来源：

JOURNAL OF THE LESS-COMMON METALS | 1985年 / 113卷 / 02期

关键词：

D O I：

10.1016/0022-5088(85)90278-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

CARBIDES

引用

页码：205 / 212

页数：8

共 8 条

[1]

KOTELINIKOV RB, 1969, SPECIAL REFRACTORY M

[2]

NAKAMURA N, 1970, INDUCTION HEATING

[3]

Oshima C., 1984, Oyo Buturi, V53, P206

[4] PREPARATION OF TAC SINGLE-CRYSTALS BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (03) :431-437

[5] TEMPERATURE DISTRIBUTION IN CRYSTAL RODS WITH HIGH MELTING-POINTS PREPARED BY A RF FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) :419-425

[6] GROWTH OF SINGLE-CRYSTALS OF THE IVA GROUP TRANSITION-METAL CARBIDES BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

TANAKA, T .

JOURNAL OF THE LESS-COMMON METALS, 1981, 82 (1-2) :63-68

[7] PREPARATION OF TICX SINGLE-CRYSTALS WITH MAXIMUM CARBON CONTENT BY A FLOATING ZONE TECHNIQUE [J].

OTANI, S ;

HONMA, S ;

TANAKA, T ;

ISHIZAWA, Y .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :1-7

[8]

Touloukian Y.S., 1970, THERMOPHYSICAL PROPE, V1st

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