MODIFICATION OF EXCITONIC EMISSION IN A GAAS BULK MICROCAVITY

被引：24

作者：

TREDICUCCI, A

CHEN, Y

PELLEGRINI, V

DEPARIS, C

机构：

[1] Scuola Normale Superiore, I-56126 Pisa

[2] Laboratoire de Microstructures, Microelectronique CNRS, 92220 Bagneux

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of cavity-induced modifications of the three-dimensional bulk exciton emission in a planar GaAs microcavity, in which the entire cavity layer is an active material. We have performed standard photoluminescence measurements at various emission angles, obtaining evidence of coupling between the exciton and the cavity mode. The modified density of photon states available for the exciton decay shows up in the angle dependence of the emission lineshape, as well as of the photoluminescence peak intensity. The experimental results are qualitatively clarified with theoretical calculations performed with an adapted transfer-matrix approach.© 1995 American Institute of Physics.

引用

页码：2388 / 2390

页数：3

共 19 条

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