PHOTOCONDUCTIVITY OF (CDSE, ZNS) - LA

被引：3

作者：

BHUSHAN, S

GIRIYA, LC

机构：

[1] Ravishankar Univ, Raipur, India, Ravishankar Univ, Raipur, India

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1988年 / 7卷 / 05期

关键词：

RARE EARTH ELEMENTS - SEMICONDUCTING ZINC COMPOUNDS - Doping - SEMICONDUCTOR MATERIALS - Doping;

D O I：

10.1007/BF01730683

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoconductivity of rare earth doped mixed bases of II-VI compounds has not drawn any particular attention, although formation of mixed bases is important from the point of view of extending the maximum response in the visible region. With this in mind, the photoconductivity of (CdSe,ZnS):La has been investigated. The lower values of photocurrent at lower and higher concentrations of lanthanum may be due to a release of fewer electrons from lanthanum and concentration quenching, respectively. Two trap depths at 0. 54 and 0. 45 eV have been found and these depend on the concentration of lanthanum.

引用

页码：444 / 446

页数：3