LOW-ENERGY PROTON BOMBARDMENT OF GAAS AND SI SOLAR CELLS

被引：8

作者：

WYSOCKI, JJ

RAPPAPORT, P

DAVISON, E

LOFERSKI, JJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1966年 / ED13卷 / 04期

关键词：

D O I：

10.1109/T-ED.1966.15705

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：420 / +

页数：1

共 14 条

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[2]

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[3]

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[4] SOME NEW RESULTS FROM LOW-ENERGY PROTON IRRADIATION OF SILICON SOLAR CELLS [J].

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[5]

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[6] THEORETICAL CONSIDERATIONS GOVERNING THE CHOICE OF THE OPTIMUM SEMICONDUCTOR FOR PHOTOVOLTAIC SOLAR ENERGY CONVERSION [J].

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[7] MEASUREMENT OF THE DEPT OF DIFFUSED LAYERS IN SILICON BY THE GROOVING METHOD [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :141-144

[8]

RAPPAPORT P, 1961, ACTA ELECTRON, V5, P364

[9]

ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

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SHOCKLEY, W .

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