TECHNIQUE FOR PRODUCING GOOD GAAS SOLAR CELLS USING POOR-QUALITY SUBSTRATES

被引：7

作者：

HOVEL, HJ ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

关键词：

D O I：

10.1063/1.88512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：447 / 449

页数：3

共 8 条

[1] ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V4, P2047
[2] MINORITY-CARRIER DIFFUSION LENGTH AND RECOMBINATION LIFETIME IN GAAS-GE PREPARED BY LIQUID-PHASE EPITAXY
ETTENBERG, M
KRESSEL, H
GILBERT, SL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 827 - 831
[3] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[4] HOVEL HJ, 1973, 10TH P IEEE PHOT SPE, P25
[5] JAMES LW, 1965, APPL PHYS L, V26, P467
[6] JAMES LW, 1975, 11TH IEEE PHOT SPEC
[7] SEKELA AM, 1974, S GAAS RELATED MATER
[8] HIGH-EFFICIENCY GA1-XALXAS-GAAS SOLAR CELLS
WOODALL, JM
HOVEL, HJ
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (08) : 379 - &