EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES

被引：22

作者：

CONSTANT, E

MIRCEA, A

PRIBETICH, J

FARRAYRE, A

机构：

[1] UNIV LILLE,CTR HYPERFREQUENCES & SEMICONDUCTEURS,CNRS,EQUIPE RECH 454,BP36,59650 VILLENEUVE DASCQ,FRANCE

[2] LAB ELECTR & PHYS APPL,3 AVE DESCARTES,94450 LIMEIL BREVANNES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3934 / 3940

页数：7

共 13 条

[1]

ALLAMANDO E, 1974, ACTA ELECTRON, V17, P127

[2]

DEGROOT J, 1972, ACTA ELECTRON, V15, P145

[3]

FARRAYRE A, 1974, 5TH P INT S GAAS DEA

[4]

GOLDWASSER RE, 1974, APPL PHYS LETT, V25, P1

[5]

IRVIN JC, 1973, 4TH P BIENN CORN EL, P287

[6]

KALLBACK B, 1973, ELECTRON LETT, V9, P11, DOI 10.1049/el:19730008

[7]

KIM CK, 1973, 4TH P BIENN CORN EL, P299

[8]

KRAMER B, 1972, 1972 P IEEE GMTT INT

[9] FM NOISE OF HIGH-EFFICIENCY GAAS IMPATT OSCILLATORS AND AMPLIFIERS [J].

MIRCEA, A ;

CONSTANT, E ;

PERRICHON, R .

APPLIED PHYSICS LETTERS, 1975, 26 (05) :245-248

[10] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J].

SALMER, G ;

PRIBETICH, J ;

FARRAYRE, A ;

KRAMER, B .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :314-324

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