SPUTTERED TA-SI-N DIFFUSION-BARRIERS IN CU METALLIZATIONS FOR SI

被引：66

作者：

KOLAWA, E ^{[1
]}

POKELA, PJ ^{[1
]}

REID, JS ^{[1
]}

CHEN, JS ^{[1
]}

RUIZ, RP ^{[1
]}

NICOLET, MA ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,PASADENA,CA 91109

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 06期

关键词：

D O I：

10.1109/55.82074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical measurements on shallow Si n+-p junction diodes with a 30-nm TiSi2 contacting layer demonstrate that an 80-nm-thick amorphous Ta36Si14N50 film prepared by reactive RF sputtering of a Ta5Si3 target in an Ar/N2 plasma very effectively prevents the interaction between the Si substrate with the TiSi2 contacting layer and a 500-nm Cu overlayer. The Ta36Si14N50 diffusion barrier maintains the integrity of the I-V characteristics up to 900-degrees-C for 30-min annealing in vacuum.

引用

页码：321 / 323

页数：3

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