EXPONENTIAL ABSORPTION-EDGE IN THE SEMICONDUCTOR CDINGAS4 AT HIGH-TEMPERATURES

被引：5

作者：

TOYODA, T

NAKANISHI, H

ENDO, S

IRIE, T

机构：

[1] SCI UNIV TOKYO, FAC SCI, DEPT ELECT ENGN, NODA, CHIBA 278, JAPAN

[2] SCI UNIV TOKYO, FAC ENGN, DEPT ELECT ENGN, SHINJUKU KU, TOKYO 162, JAPAN

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1986年 / 19卷 / 02期

关键词：

D O I：

10.1088/0022-3727/19/2/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L21 / L24

页数：4

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