STUDY OF STABILIZATION AND SURFACE RECOMBINATION ON N-GAP PHOTO-ELECTRODES - MECHANISMS AND INTERRELATION

被引：47

作者：

VANMAEKELBERGH, D ^{[1
]}

GOMES, WP ^{[1
]}

CARDON, F ^{[1
]}

机构：

[1] STATE UNIV GHENT, KRISTALLOG STUDIE VASTE STOF LAB, B-9000 GHENT, BELGIUM

来源：

关键词：

D O I：

10.1149/1.2123897

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：546 / 550

页数：5

共 10 条

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[3] GOMES WP, 1981, ACS SYM SER, V146, P119
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[6] MEMMING R, 1979, PHILIPS TECH REV, V38, P160
[7] NAKATO Y, 1981, CHEM LETT, P127, DOI 10.1246/cl.1981.127
[8] THE CURRENT-VOLTAGE CHARACTERISTICS OF SEMICONDUCTOR-ELECTROLYTE JUNCTION PHOTO-VOLTAIC CELLS
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[9] VANOVERMEIRE F, 1980, B SOC CHIM BELG, V89, P181
[10] MODEL FOR CURRENT-VOLTAGE CURVE OF PHOTOEXCITED SEMICONDUCTOR ELECTRODES
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