OPTICAL-PROPERTIES OF A 1.3-MU-M INGAASP SUPERLUMINESCENT DIODE

被引：10

作者：

DUTTA, NK

NELSON, RJ

WRIGHT, PD

BESOMI, P

WILSON, RB

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1983.21130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：360 / 363

页数：4

共 16 条

[1] GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS
DUTTA, NK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 55 - 60
[2] DUTTA NK, 1981, APPL PHYS LETT, V38, P407, DOI 10.1063/1.92380
[3] DUTTA NK, 1980, I PHYS C SER, V56, P193
[4] EPWORTH RE, 1978, 4TH P EUR C OPT COMM, P492
[5] GEOMETRICAL PROPERTIES OF RANDOM PARTICLES AND EXTRACTION OF PHOTONS FROM ELECTROLUMINESCENT DIODES
JOYCE, WB
BACHRACH, RZ
DIXON, RW
SEALER, DA
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) : 2229 - 2253
[6] LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M
KAMINOW, IP
EISENSTEIN, G
STULZ, LW
DENTAI, AG
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) : 78 - 82
[7] KAMINOW IP, 1983, IEEE J QUANTUM ELECT, V19
[8] Kressel H., 1980, SEMICONDUCTOR DEVICE
[9] LEE TP, 1973, IEEE J QUANTUM ELECT, VQE 9, P820, DOI 10.1109/JQE.1973.1077738
[10] COMPUTER-MODEL OF A SUPERLUMINESCENT LED WITH LATERAL CONFINEMENT
MARCUSE, D
KAMINOW, IP
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (07) : 1234 - 1244