PATH TO CONCEPTION OF JUNCTION TRANSISTOR

被引：51

作者：

SHOCKLEY, W ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD,CA 94305

来源：

关键词：

D O I：

10.1109/T-ED.1976.18463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：597 / 620

页数：24

共 24 条

[1] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1948, 74 (02) :230-231

[2] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1949, 75 (08) :1208-1225

[3]

BRATTAIN W, 1956, PRIX NOBEL, P130

[4]

Brattain W. H, 1976, ADVENTURES EXPT PHYS, V5, P1

[5] NATURE OF THE FORWARD CURRENT IN GERMANIUM POINT CONTACTS [J].

BRATTAIN, WH ;

BARDEEN, J .

PHYSICAL REVIEW, 1948, 74 (02) :231-232

[6]

BRATTAIN WH, 1972, BELL LABORATORIES RE, V50, P338

[7]

FINK DG, 1948, ELECTRONICS SEP

[8]

Nelson RR, 1962, RATE DIRECTION INVEN, P549

SHOCKLEY, W ;

PEARSON, GL .

PHYSICAL REVIEW, 1948, 74 (02) :232-233

[10]

SHOCKLEY W, 1957, P IRE, V45, P1409