MICROPROCESSING OF GAAS CYLINDRICAL COLUMNS FOR INTEGRATED OPTICAL-DEVICE FABRICATION BY CL2-AR REACTIVE ION ETCHING

被引：11

作者：

YAMADA, H

ITO, H

INABA, H

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 14期

关键词：

D O I：

10.1049/el:19840408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 592

页数：2

共 8 条

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ASAKAWA, K ;

SUGATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10) :L653-L655

[2] REACTIVE ION ETCHED GAAS OPTICAL-WAVEGUIDE MODULATORS WITH LOW-LOSS AND HIGH-SPEED [J].

BUCHMANN, P ;

KAUFMANN, H ;

MELCHIOR, H ;

GUEKOS, G .

ELECTRONICS LETTERS, 1984, 20 (07) :295-297

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] MONOLITHIC 2-SECTION GAINASP-INP ACTIVE-OPTICAL-RESONATOR DEVICES FORMED BY REACTIVE ION ETCHING [J].

COLDREN, LA ;

MILLER, BI ;

IGA, K ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :315-317

[5]

ITO H, NOVEL STRUCTURE LASE, P577

[6] THE USE OF III-V COMPOUNDS FOR INTEGRATED OPTICAL CIRCUITS [J].

MERZ, JL .

FIBER AND INTEGRATED OPTICS, 1982, 4 (02) :143-157

[7] CW OPERATION OF 1.5-MU-M GAINASP-INP BURIED-HETEROSTRUCTURE LASER WITH A REACTIVE-ION-ETCHED FACET [J].

MIKAMI, O ;

AKIYA, H ;

SAITOH, T ;

NAKAGOME, H .

ELECTRONICS LETTERS, 1983, 19 (06) :213-215

[8]

YAMADA H, 1983, P S DRY PROCESSES, P73

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