HYDROGEN PASSIVATION OF DEEP DONOR CENTERS IN HIGH-PURITY EPITAXIAL GAAS

被引：18

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 16期

关键词：

D O I：

10.1049/el:19820486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：715 / 716

页数：2

共 8 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[2] EVALUATION OF EPITAXIAL N-GAAS FOR NUCLEAR RADIATION DETECTION [J].

EBERHARDT, JE ;

RYAN, RD ;

TAVENDALE, AJ .

NUCLEAR INSTRUMENTS & METHODS, 1971, 94 (03) :463-+

[3] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[4] HYDROGEN PASSIVATION OF COPPER-RELATED DEFECTS IN GERMANIUM [J].

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :253-255

[5] DEEP TRAPPING CENTERS IN N-GAAS SURFACE-BARRIER DIODES FOR NUCLEAR RADIATION DETECTION [J].

PEARTON, SJ ;

TAVENDALE, AJ ;

WILLIAMS, AA .

ELECTRONICS LETTERS, 1980, 16 (12) :483-484

[6]

PEARTON SJ, 1982, J APPL PHYS

[7] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

SEAGER, CH ;

GINLEY, DS .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :337-340

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P647

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