OPTICAL-PROPERTIES OF GAN LIGHT-EMITTING DIODES

被引：35

作者：

SHINTANI, A ^{[1
]}

MINAGAWA, S ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 11期

关键词：

D O I：

10.1149/1.2132678

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1725 / 1729

页数：5

相关论文

共 18 条

[1] LUMINESCENCE OF ZN-DOPED AND CD-DOPED GAN
ILEGEMS, M
LOGAN, RA
DINGLE, R
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3797 - &
[2] MECHANISM OF LIGHT PRODUCTION IN METAL-INSULATOR-SEMICONDUCTOR DIODES - GAN - MG VIOLET LIGHT-EMITTING DIODES
MARUSKA, HP
STEVENSON, DA
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (11) : 1171 - 1179
[3] MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES
MARUSKA, HP
ANDERSON, LJ
STEVENSON, DA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) : 1202 - 1207
[4] VIOLET LUMINESCENCE OF MG-DOPED GAN
MARUSKA, HP
STEVENSON, DA
PANKOVE, JI
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 303 - 305
[5] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
TIETJEN, JJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &
[6] PREPARATION OF MG-DOPED GAN DIODES EXHIBITING VIOLET ELECTROLUMINESCENCE
MARUSKA, HP
STEVENSON, DA
RHINES, WC
[J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (08) : 777 - +
[7] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA
MONEMAR, B
[J]. PHYSICAL REVIEW B, 1974, 10 (02): : 676 - 681
[8] Pankove J. I., 1973, Journal of Luminescence, V6, P54, DOI 10.1016/0022-2313(73)90094-X
[9] Pankove J. I., 1973, Journal of Luminescence, V7, P114, DOI 10.1016/0022-2313(73)90062-8
[10] Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3