FRANZ-KELDYSH EFFECT IN SPACE-CHARGE REGION OF A GERMANIUM P-N JUNCTION

被引：96

作者：

FROVA, A

HANDLER, P

机构：

来源：

PHYSICAL REVIEW | 1965年 / 137卷 / 6A期

关键词：

D O I：

10.1103/PhysRev.137.A1857

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1857 / &

共 24 条

[1] ANWENDUNG ELEKTRO-OPTISCHER EFFEKTE ZUR ANALYSE DES ELEKTRISCHEN LEITUNGSVORGANGES IN CDS-EINKRISTALLEN
BOER, KW
HANSCH, HJ
KUMMEL, U
[J]. ZEITSCHRIFT FUR PHYSIK, 1959, 155 (02): : 170 - 183
[2] BULYANITSA DS, 1960, ZH EKSPERIM TEOR FIZ, V38, P1261
[3] OPTICAL ABSORPTION IN AN ELECTRIC FIELD
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1963, 130 (02): : 549 - &
[4] OPTICAL ABSORPTION IN ELECTRIC FIELD
CALLAWAY, J
[J]. PHYSICAL REVIEW, 1964, 134 (4A): : A998 - +
[5] ELECTROABSORPTION SPECTRUM IN SILICON
CHESTER, M
WENDLAND, PH
[J]. PHYSICAL REVIEW LETTERS, 1964, 13 (06) : 193 - &
[6] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
[J]. PHYSICAL REVIEW, 1962, 125 (03): : 877 - &
[7] CYCLOTRON RESONANCE EXPERIMENTS IN SILICON AND GERMANIUM
DEXTER, RN
ZEIGER, HJ
LAX, B
[J]. PHYSICAL REVIEW, 1956, 104 (03): : 637 - 644
[8] FRANZ W, 1958, Z NATURFORSCH, VA 13, P484
[9] SHIFT OF OPTICAL ABSORPTION EDGE BY ELECTRIC FIELD - MODULATION OF LIGHT IN SPACE-CHARGE REGION OF GE P-N JUNCTION ( 90 PERCENT MODULATION AT LAMBDA - 1.56 MU E )
FROVA, A
HANDLER, P
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (01) : 11 - &
[10] FROVA A, 1964, 7TH P INT C PHYS SEM, P157