CRYSTALLOGRAPHIC RELATIONSHIPS BETWEEN GAAS, AS AND GA2O3 AT THE GAAS-THERMAL OXIDE INTERFACE

被引：19

作者：

SANDS, T

WASHBURN, J

GRONSKY, R

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

[3] BELL COMMUN RES,MURRAY HILL,NJ 07974

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 5-6期

关键词：

D O I：

10.1016/0167-577X(85)90066-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / 250

页数：4

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[8] ARSENIC INCORPORATION IN NATIVE OXIDES OF GAAS GROWN THERMALLY UNDER ARSENIC TRIOXIDE VAPOR [J].

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