CHARGING ARTIFACTS IN ATOMIC-FORCE MICROSCOPY

被引：2

作者：

EMERSON, L ^{[1
]}

COX, G ^{[1
]}

机构：

[1] UNIV SYDNEY,ELECTRON MICROSCOPE UNIT,SYDNEY,NSW 2006,AUSTRALIA

来源：

MICRON | 1994年 / 25卷 / 03期

关键词：

ATOMIC FORCE MICROSCOPE; AFM; CHARGING; SILICON; SILICON DIOXIDE;

D O I：

10.1016/0968-4328(94)90032-9

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Specimen conductivity is not generally considered to be a requirement in Atomic Force Microscopy (AFM). However, imagin highly resistive (silica) surfaces at high magnifications we have observed artefacts which seem to be only attributable to charging of the sample surface through interaction with the scanning probe tip.

引用

页码：267 / 269

页数：3