THE DIFFUSION OF TIN AND SELENIUM IN GALLIUM ARSENIDE

被引：40

作者：

FANE, RW

GOSS, AJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(63)90103-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：383 / 387

页数：5

共 14 条

[1] EVALUATION OF THE SURFACE CONCENTRATION OF DIFFUSED LAYERS IN SILICON
BACKENSTOSS, G
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1958, 37 (03): : 699 - 710
[2] DIFFUSION OF ZINC IN GALLIUM ARSENIDE
CUNNELL, FA
GOOCH, CH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 127 - 133
[3] DIFFUSION OF CADMIUM INTO GALLIUM ARSENIDE
CUNNELL, FA
GOOCH, CH
[J]. NATURE, 1960, 188 (4756) : 1096 - 1096
[4] EMELYANENKO OV, 1960, SOV PHYS-SOL STATE, V2, P176
[5] DIFFUSION OF TIN IN GALLIUM ARSENIDE
GOLDSTEIN, B
KELLER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) : 1180 - &
[6] DIFFUSION IN COMPOUND SEMICONDUCTORS
GOLDSTEIN, B
[J]. PHYSICAL REVIEW, 1961, 121 (05): : 1305 - &
[7] STUDIES ON GROUP-III-V INTERMETALLIC COMPOUNDS
KOLM, C
KULIN, SA
AVERBACH, BL
[J]. PHYSICAL REVIEW, 1957, 108 (04): : 965 - 971
[8] KOSENKO VE, 1962, SOV PHYS-SOL STATE, V3, P1526
[9] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE
LONGINI, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) : 127 - 130
[10] ZINC DIFFUSION IN ALUMINIUM ANTIMONIDE
SHAW, D
JONES, P
HAZELBY, D
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1962, 80 (513): : 167 - &