ANOMALOUS ANDREEV CONDUCTANCE IN INAS-ALSB QUANTUM-WELL STRUCTURES WITH NB ELECTRODES

被引:151
作者
NGUYEN, C
KROEMER, H
HU, EL
机构
[1] Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara
关键词
D O I
10.1103/PhysRevLett.69.2847
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The differential conductance of InAs-AlSb quantum wells with superconducting Nb electrodes exhibits a sharp single peak at zero bias, followed by a drop below the normal conductance at voltages an order of magnitude higher than the gap voltage, before returning to the normal value at yet higher bias. The behavior is interpreted in terms of Andreev reflections, modified by multiple normal reflections of both electrons and Andreev holes between the Nb electrodes and the bottom barrier of the quantum well, in the presence of a nonuniform potential along the well.
引用
收藏
页码:2847 / 2850
页数:4
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