DEPENDENCE OF RESISTIVITY OF CHROMIUM-SILICON MONOXIDE FILMS ON THEIR CHEMICAL COMPOSITION

被引：2

作者：

REALE, C

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 10期

关键词：

D O I：

10.1109/PROC.1967.6002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1770 / &

共 15 条

[1] BECKERMAN M, 1962, 8 T VAC S, V2, P905
[2] BOZORTH RM, 1951, FERROMAGNETISM, P434
[3] PRECISION THIN-FILM CERMET RESISTORS FOR INTEGRATED CIRCUITS
BRAUN, L
LOOD, DE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (11): : 1521 - &
[4] DEGENHART HJ, 1962, 8 T S AM VAC SOC, V2, P859
[5] DUNNING WJ, 1955, CHEMISTRY SOLID STAT, P164
[6] The conductivity of thin metallic films according to the electron theory of metals
Fuchs, K
[J]. PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 : 100 - 108
[7] GARNER WE, 1955, CHEMISTRY SOLID S ED, P164
[8] HASS G, 1964, PHYSICS THIN FILM ED, V2, P22
[9] KITTEL C, 1962, INTRODUCTION SOLID S, P312
[10] NEUGEBAUER CA, 1964, PHYS THIN FILMS, V2, P22