EXCITONIC-TRANSITION OF (ZNSE-ZNS)/CAF2 STRAINED-LAYER SUPERLATTICES UNDER LOWER EXCITATION

被引:3
作者
GUAN, ZP
ZHANG, JH
FAN, GH
FAN, XW
机构
[1] Changchun Institute of Physics, Academia Sinica, Changchun
基金
中国国家自然科学基金;
关键词
D O I
10.1016/0022-0248(92)90804-R
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A photoluminescence (PL) study of ZnSe-ZnS strained-layer superlattice (SLS) on a transparent substrate, CaF2, grown by atmospheric pressure metalorganic chemical vapour deposition (AP-MOCVD) is presented. Two absorption bands and three emission bands in the SLS were observed for the first time under low excitation. The origin of some bands might be ascribed to the excitonic transition of n = 1 heavy and light hole.
引用
收藏
页码:515 / 518
页数:4
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