Negative differential resistance on electron transport through ultrasmall particles

被引：13

作者：

Nakashima, H

Uozumi, K

机构：

[1] Department of Physics, College of Science and Technology, Aoyama Gakuin University, Tokyo, 157

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 12B期

关键词：

negative differential resistance; single-electron tunneling; quantum dots; charging energy; image charge; granular film;

D O I：

10.1143/JJAP.34.L1659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theoretical study on a nem one-dimensional array of normal tunnel junctions which produces a negative differential resistance. The junctions are composed of ultrasmall particles, and one of them goes in the direction opposite that of the external electric field. We show de current-voltage characteristics for this system in terms of a basic single-electron tunneling model. In this system, negative resistance arises due to single-electron tunneling behavior.

引用

页码：L1659 / L1661

页数：3

共 7 条

[1]

FEYNMAN RP, 1965, LECTURES PHYSICS, V2, P6

[2]

INGOLD GL, 1992, NATO ADV SCI I B-PHY, V294, P21

[3] 3-TUNNEL-CAPACITOR MODEL FOR SINGLE-ELECTRON TUNNELING IN LAYERED THIN-FILMS [J].