FORMATION OF (100) GAAS ON (100) SILICON BY LASER RECRYSTALLIZATION

被引：9

作者：

CHRISTOU, A ^{[1
]}

EFTHIMIOPOULOS, T ^{[1
]}

KIRIAKIDIS, G ^{[1
]}

VARMAZIS, C ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 22期

关键词：

D O I：

10.1063/1.96853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1516 / 1518

页数：3

共 14 条

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[9] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].

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[10] HETERO-EPITAXIAL GROWTH OF GAP ON A SI (100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY [J].

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