INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS

被引：3

作者：

HAUNG, CJ ^{[1
]}

CHANG, CY ^{[1
]}

CHEN, MC ^{[1
]}

TSENG, TY ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 09期

关键词：

D O I：

10.1111/j.1151-2916.1991.tb08302.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Using single-target on-axis sputter deposition, YBa2Cu3O7-x films, with flatness oriented in the c axis and a zero-resistance temperature (T(co)) of 89 K, were prepared by an in situ growth technique. This work examines the effect of the growth temperature on the properties of in situ films. The experimental results show that high-quality YBa2Cu3O7-x films can be obtained by controlling the substrate temperature in a range from 680-degrees to 690-degrees-C. In addition, a new parallel-circuit model is proposed and a simulation of the resistance versus temperature curve is presented.

引用

页码：2305 / 2308

页数：4

共 17 条

[1]

CHAPMAN B, 1980, GLOW DISCHARGE PROCE, pCH2

[2] REACTIVE MAGNETRON SPUTTERING OF THIN-FILM SUPERCONDUCTOR YBA2CU3O7-CHI [J].