MOLECULAR-BEAM EPITAXY OF MNAS THIN-FILMS ON GAAS

被引：139

作者：

TANAKA, M ^{[1
]}

HARBISON, JP ^{[1
]}

SANDS, T ^{[1
]}

CHEEKS, TL ^{[1
]}

KERAMIDAS, VG ^{[1
]}

ROTHBERG, GM ^{[1
]}

机构：

[1] STEVENS INST TECHNOL,HOBOKEN,NJ 07030

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully grown single-crystalline ferromagnetic MnAs thin films on (001) GaAs substrates by molecular beam epitaxy. By reflection high energy electron diffraction and x-ray measurements, the growth direction of the MnAs thin films was found to be [1100BAR] on (001) GaAs, and the epitaxial relationship was [0001] MnAs //[110BAR] GaAs and [1120BAR] MnAs //[110] GaAs. Magnetization measurements at room temperature have revealed that the epitaxial MnAs thin films have strong magnetic anisotropy, and that the easy magnetization direction is in-plane, along the [1120BAR] axis of the MnAs thin films which is parallel to the [110] axis of the GaAs substrate, with almost perfect square hysteresis loops, relatively high remanent magnetization, and low coercive field.

引用

页码：1091 / 1094

页数：4

共 12 条

[1] EPITAXIAL-TAU (MN,NI)AL/(AL,GA)AS HETEROSTRUCTURES - MAGNETIC AND MAGNETOOPTIC PROPERTIES [J].