POSITRON STATES IN SI AND GAAS

被引：111

作者：

PUSKA, MJ ^{[1
]}

CORBEL, C ^{[1
]}

机构：

[1] CENS,INSTN,F-91191 GIF SUR YVETTE,FRANCE

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.38.9874

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9874 / 9880

页数：7

共 28 条

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[17] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

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MOSER, P ;

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[19]

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[20] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS [J].

LOUALICHE, S ;

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GUILLOT, G ;

LANNOO, M .

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