2-DIMENSIONAL SIMULATION OF QUANTUM-WELL LASERS

被引：14

作者：

SONG, GH

HESS, K

KERKHOVEN, T

RAVAIOLI, U

机构：

[1] Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois, 61801, Champaign

[2] Department of Computer Science, University of Illinois at Urbana-Champaign, Urbana, Illinois

[3] Beckman Institute and Department of Electrical and Computer Engineering, University of Illinois, Urbana, Illinois, 61801, Champaign

来源：

EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS | 1990年 / 1卷 / 04期

关键词：

D O I：

10.1002/ett.4460010403

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A versatile two-dimensional simulator for various types of semiconductor lasers for both steady state and transients has been developed. The simulator is capable of spectral analysis of quantum-well semiconductor lasers, such as gain-spectrum analysis, as well as analysis of the two-dimensional current flow and optical intensity patterns. The simulator is based on the drift-diffusion model with full Fermi-Dirac statistics for the transport equations as well as for the Poisson equation. Simulation of the thermionic emission current is required at the abrupt heterointerfaces of the quantum well. For the spectral analysis of quantum-well lasers, we have used the photon rate equation for each Fabry-Perot mode. For the optical intensity pattern, we have solved the two-dimensional Helmholtz eigenvalue equation using the subspace iteration method. The transient simulation is done by the full backward-Euler method in conjuction with the full Newton approach for the entire semiconductor equations. To demonstrate the simulator, a model GaAs-AlGaAs graded-index-separate-confinement-heterostructure buried-quantum-well laser is analyzed.

引用

页码：375 / 381

页数：7

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