SYMMETRICAL CONTOURS OF DEEP LEVEL EL2 IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS

被引：37

作者：

HOLMES, DE

CHEN, RT

ELLIOTT, KR

KIRKPATRICK, CG

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.94294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：305 / 307

页数：3

共 19 条

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[3]

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ELLIOTT, KR .

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[6] EL2 DISTRIBUTIONS IN DOPED AND UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

YANG, J .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :419-421

[7] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[8] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J].

HOLMES, DE ;

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ELLIOTT, KR ;

YU, PW .

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[9]

HOLMES DE, 1982, SEMIINSULATING 3 5 M, P19

[10] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J].

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APPLIED PHYSICS, 1980, 21 (03) :257-261

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