ELECTRICAL TRANSPORT MEASUREMENTS IN A GASKETED DIAMOND ANVIL CELL UP TO 18 GPA

被引:24
作者
GONZALEZ, J [1 ]
BESSON, JM [1 ]
WEILL, G [1 ]
机构
[1] UNIV PIERRE & MARIE CURIE,DEPT HAUTES PRESS,F-75230 PARIS,FRANCE
关键词
D O I
10.1063/1.1139129
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:106 / 107
页数:2
相关论文
共 6 条
[1]   DIAMOND CELL STIMULATES HIGH-PRESSURE RESEARCH [J].
BLOCK, S ;
PIERMARINI, G .
PHYSICS TODAY, 1976, 29 (09) :44-&
[2]   BAND-OVERLAP METALLIZATION OF BATE [J].
GRZYBOWSKI, TA ;
RUOFF, AL .
PHYSICAL REVIEW LETTERS, 1984, 53 (05) :489-492
[3]  
MAO HK, 1977, HIGH PRESSURE RES AP, P493
[4]  
REICHLIN RL, 1982, REV SCI INSTRUM, V12, P54
[5]   ELECTRICAL-RESISTANCE MEASUREMENTS AT HIGH-PRESSURE AND LOW-TEMPERATURE USING A DIAMOND-ANVIL CELL [J].
SAKAI, N ;
KAJIWARA, T ;
TSUJI, K ;
MINOMURA, S .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1982, 53 (04) :499-502
[6]   ELECTRICAL-TRANSPORT MEASUREMENTS ON FRAGILE SINGLE-CRYSTALS TO 7.5 GPA IN THE DIAMOND ANVIL CELL [J].
TOZER, SW ;
KING, HE .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1985, 56 (02) :260-263