PROTON-INDUCED CHARGE-TRANSFER DEGRADATION IN CCDS FOR NEAR-ROOM TEMPERATURE APPLICATIONS

被引：23

作者：

HOPKINS, IH

HOPKINSON, GR

JOHLANDER, B

机构：

[1] SIRA INST LTD,CHISLEHURST BR7 5EH,KENT,ENGLAND

[2] EUROPEAN SPACE AGCY,ESTEC,2200 AG NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/23.340533

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optical technique for measuring charge transfer inefficiency (CTI) in CCDs, operated under near-room temperature, high readout rate conditions, is described. It is possible to measure trap emission times and CTI dependence on signal size, background charge and clock waveform shape to high accuracy, both for serial and parallel transfers. It is shown that the presence of background charge (or 'fat zero') can substantially improve charge transfer efficiency.

引用

收藏

页码：1984 / 1991

页数：8

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