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PHOTO-ELECTROCHEMICAL DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN II-VI-COMPOUNDS
被引:28
作者
:
GAUTRON, J
论文数:
0
引用数:
0
h-index:
0
GAUTRON, J
LEMASSON, P
论文数:
0
引用数:
0
h-index:
0
LEMASSON, P
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1982年
/ 59卷
/ 1-2期
关键词
:
D O I
:
10.1016/0022-0248(82)90346-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:332 / 337
页数:6
相关论文
共 24 条
[1]
Ambridge T., 1973, J APPL ELECTROCHEM, V3, P1
[2]
RATE OF PHOTOELECTROCHEMICAL GENERATION OF HYDROGEN AT P-TYPE SEMICONDUCTORS
BOCKRIS, JOM
论文数:
0
引用数:
0
h-index:
0
机构:
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
BOCKRIS, JOM
UOSAKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
UOSAKI, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
: 1348
-
1355
[3]
PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
BUTLER, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(05)
: 1914
-
1920
[4]
STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES
ELLIS, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
ELLIS, AB
KAISER, SW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
KAISER, SW
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOLTS, JM
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1977,
99
(09)
: 2839
-
2848
[5]
FOTOUHI B, 1982, CR ACAD SCI II, V294, P167
[6]
DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
论文数:
0
引用数:
0
h-index:
0
GARTNER, WW
[J].
PHYSICAL REVIEW,
1959,
116
(01):
: 84
-
87
[7]
ELECTROCHEMICAL BEHAVIOR OF AN AQUEOUS ELECTROLYTE-I-DOPED ZNSE JUNCTION IN THE DARK AND UNDER ILLUMINATION
GAUTRON, J
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
GAUTRON, J
LEMASSON, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
LEMASSON, P
RABAGO, F
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
RABAGO, F
TRIBOULET, R
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
TRIBOULET, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1868
-
1875
[8]
PHOTOELECTROCHEMICAL ENERGY-CONVERSION AND STORAGE USING POLYCRYSTALLINE CHALCOGENIDE ELECTRODES
HODES, G
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
HODES, G
MANASSEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
MANASSEN, J
CAHEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
CAHEN, D
[J].
NATURE,
1976,
261
(5559)
: 403
-
404
[9]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[10]
KIREEV PS, 1972, SOV PHYS SEMICOND+, V6, P109
←
1
2
3
→
共 24 条
[1]
Ambridge T., 1973, J APPL ELECTROCHEM, V3, P1
[2]
RATE OF PHOTOELECTROCHEMICAL GENERATION OF HYDROGEN AT P-TYPE SEMICONDUCTORS
BOCKRIS, JOM
论文数:
0
引用数:
0
h-index:
0
机构:
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
BOCKRIS, JOM
UOSAKI, K
论文数:
0
引用数:
0
h-index:
0
机构:
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
FLINDERS UNIV S AUSTRALIA,SCH PHYS SCI,ADELAIDE,AUSTRALIA
UOSAKI, K
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(09)
: 1348
-
1355
[3]
PHOTOELECTROLYSIS AND PHYSICAL-PROPERTIES OF SEMICONDUCTING ELECTRODE WO3
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA LABS,ALBUQUERQUE,NM 87115
SANDIA LABS,ALBUQUERQUE,NM 87115
BUTLER, MA
[J].
JOURNAL OF APPLIED PHYSICS,
1977,
48
(05)
: 1914
-
1920
[4]
STUDY OF N-TYPE SEMICONDUCTING CADMIUM CHALCOGENIDE-BASED PHOTOELECTROCHEMICAL CELLS EMPLOYING POLYCHALCOGENIDE ELECTROLYTES
ELLIS, AB
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
ELLIS, AB
KAISER, SW
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
KAISER, SW
BOLTS, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
BOLTS, JM
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
1977,
99
(09)
: 2839
-
2848
[5]
FOTOUHI B, 1982, CR ACAD SCI II, V294, P167
[6]
DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS
GARTNER, WW
论文数:
0
引用数:
0
h-index:
0
GARTNER, WW
[J].
PHYSICAL REVIEW,
1959,
116
(01):
: 84
-
87
[7]
ELECTROCHEMICAL BEHAVIOR OF AN AQUEOUS ELECTROLYTE-I-DOPED ZNSE JUNCTION IN THE DARK AND UNDER ILLUMINATION
GAUTRON, J
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
GAUTRON, J
LEMASSON, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
LEMASSON, P
RABAGO, F
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
RABAGO, F
TRIBOULET, R
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,ELECTROCHIM INTERFACIALE LAB,F-92190 MEUDON,FRANCE
TRIBOULET, R
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(11)
: 1868
-
1875
[8]
PHOTOELECTROCHEMICAL ENERGY-CONVERSION AND STORAGE USING POLYCRYSTALLINE CHALCOGENIDE ELECTRODES
HODES, G
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
HODES, G
MANASSEN, J
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
MANASSEN, J
CAHEN, D
论文数:
0
引用数:
0
h-index:
0
机构:
WEIZMANN INST SCI,DEPT PLAST RES,REHOVOTH,ISRAEL
CAHEN, D
[J].
NATURE,
1976,
261
(5559)
: 403
-
404
[9]
OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
论文数:
0
引用数:
0
h-index:
0
HWANG, CJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(09)
: 3731
-
&
[10]
KIREEV PS, 1972, SOV PHYS SEMICOND+, V6, P109
←
1
2
3
→