LATTICE IMAGES OF DEFECT-FREE SILICON ON SAPPHIRE PREPARED BY ION-IMPLANTATION

被引：6

作者：

PARKER, MA ^{[1
]}

SINCLAIR, R ^{[1
]}

SIGMON, TW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.96094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：626 / 628

页数：3

共 11 条

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[4]

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[6]

Hutchison J. L., 1981, Microscopy of Semiconducting Materials, 1981. Proceedings of the 2nd Oxford Conference, P139

[7]

PARKER MA, 1984, P S D LAYERED STRUCT

[8]

PONCE FA, 1980, DEFECTS SEMICONDUCTO, P285

[9]

RICHMOND DE, 1984, P S D LAYERED STRUCT

[10] CHARACTERIZATION OF SI-IMPLANTED AND ELECTRON-BEAM-ANNEALED SILICON-ON-SAPPHIRE USING HIGH-RESOLUTION ELECTRON-MICROSCOPY [J].

SMITH, DJ ;

FREEMAN, LA ;

MCMAHON, RA ;

AHMED, H ;

PITT, MG ;

PETERS, TB .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2207-2212

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