ZINC DIFFUSION IN ALXGA1-XP

被引：7

作者：

KLEINKNECHT, HP ^{[1
]}

WIDMER, AE ^{[1
]}

机构：

[1] RCA LABS LTD,CH-8048 ZURICH,SWITZERLAND

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 12期

关键词：

D O I：

10.1016/0038-1101(76)90180-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1005 / &

共 13 条

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CASEY, HC ;

PANISH, MB ;

CHANG, LL .

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[3]

CHICOTKA RJ, 1971, NAS122169 CONTR

[4]

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[6] (GAAL)P OPTICAL-WAVEGUIDE MODULATORS FABRICATED BY LIQUID-PHASE EPITAXY [J].

KLEINKNECHT, HP ;

WIDMER, AE .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3453-3459

[7]

NAMIZAKI H, 1974, J APPL PHYS, V45, P2785, DOI 10.1063/1.1663670

[8] CHARACTERISTICS OF JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS [J].

NAMIZAKI, H ;

KAN, H ;

ISHII, M ;

ITO, A ;

SUSAKI, W .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (10) :1618-1623

[9] ZINC DIFFUSION INTO GALLIUM PHOSPHIDE UNDER HIGH AND LOW PHOSPHORUS OVERPRESSURE [J].

NYGREN, SF ;

PEARSON, GL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (05) :648-&

[10]

SUSAKI W, 1973, J APPL PHYS, V44, P2993

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