RADIATION-INDUCED ROD-LIKE DEFECTS IN SILICON AND GERMANIUM

被引：22

作者：

BARTSCH, H

HOEHL, D

KASTNER, G

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：543 / 551

页数：9

共 26 条

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